METHOD FOR PRODUCING SEMICONDUCTOR DEVICE FEATURING LOW DENSITY OF FLAWS Russian patent published in 2003 - IPC

Abstract RU 2210141 C1

FIELD: manufacture of semiconductor devices. SUBSTANCE: during manufacture of semiconductor devices they undergo treatment by exposure to high-energy magnetic fields at all stages of process for minimum three hours followed by annealing at temperature of 300-400 C for 5-15 s. EFFECT: reduced flaw density, improved parameters, enhanced reliability and yield, facilitated manufacture. 1 cl, 1 tbl

Similar patents RU2210141C1

Title	Year	Author	Number
METHOD FOR RAISING SPEED OF SILICON BASE SEMICONDUCTOR DEVICES	2001	Mustafaev A.G. Teshev R.Sh. Mustafaev A.G.	RU2197766C2
METHOD FOR RAISING GAIN OF SILICON-BASED SEMICONDUCTOR DEVICES	1999	Mustafaev G.A. Teshev R.Sh. Mustafaev A.G.	RU2168236C2
SEMICONDUCTOR DEVICE MANUFACTURING PROCESS	2004	Mustafaev A.G. Kumakhov A.M. Mustafaev A.G.	RU2256980C1
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE	2004	Mustafaev Abdulla Gasanovich Kumakhov Adil' Mukhadinovich Mustafaev Arslan Gasanovich	RU2275712C2
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE	2014	Mustafaev Gasan Abakarovich Mustafaev Abdulla Gasanovich Mustafaev Arslan Gasanovich	RU2556765C1
METHOD OF SEMICONDUCTOR INSTRUMENT MANUFACTURING WITH LOW FLAW DENSITY	2006	Mustafaev Abdulla Gasanovich Mustafaev Gasan Abakarovich Mustafaev Arslan Gasanovich	RU2330349C1
METHOD OF MAKING SEMICONDUCTOR DEVICE	2008	Mustafaev Abdulla Gasanovich Mustafaev Gasan Abakarovich Mustafaev Arslan Gasanovich	RU2388108C1
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE	2009	Mustafaev Abdulla Gasanovich Mustafaev Gasan Abakarovich Mustafaev Arslan Gasanovich	RU2418343C1
METHOD FOR SEMICONDUCTOR DEVICE FABRICATION	2008	Mustafaev Abdulla Gasanovich Mustafaev Gasan Abakarovich Mustafaev Arslan Gasanovich	RU2433501C2
METHOD OF MAKING SEMICONDUCTOR DEVICE	2007	Mustafaev Abdulla Gasanovich Mustafaev Gasan Abakarovich Mustafaev Arslan Gasanovich	RU2372689C2

RU 2 210 141 C1

Authors

Mustafaev A.G.

Teshev R.Sh.

Mustafaev A.G.

Dates

2003-08-10—Published

2002-01-08—Filed