METHOD FOR RAISING SPEED OF SILICON BASE SEMICONDUCTOR DEVICES Russian patent published in 2003 - IPC

Abstract RU 2197766 C2

FIELD: manufacture of semiconductor devices. SUBSTANCE: upon formation semiconductor devices are exposed to magnetic fields within pyramid space for minimum 5 h followed by stabilizing annealing at 100-250 C for 5-50 minutes. EFFECT: enhanced speed, extended operating frequency band, enhanced reliability and yield. 1 tbl

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RU 2 197 766 C2

Authors

Mustafaev A.G.

Teshev R.Sh.

Mustafaev A.G.

Dates

2003-01-27—Published

2001-04-09—Filed