SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 2005 - IPC

Abstract RU 2256980 C1

FIELD: manufacture of semiconductor devices.

SUBSTANCE: upon producing insulating film on semiconductor substrate surface devices are treated by high-energy electrons at dose rate of 2·1014 - 8·1016 cm-2 with energy of 4 MeV followed by baking at temperature of 300 - 500°C for 5 - 30 s.

EFFECT: reduced pore density which facilitates device manufacture; improved parameters, enhanced reliability and yield.

1 cl, 1 tbl

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RU 2 256 980 C1

Authors

Mustafaev A.G.

Kumakhov A.M.

Mustafaev A.G.

Dates

2005-07-20Published

2004-02-11Filed