FIELD: manufacture of semiconductor devices.
SUBSTANCE: upon producing insulating film on semiconductor substrate surface devices are treated by high-energy electrons at dose rate of 2·1014 - 8·1016 cm-2 with energy of 4 MeV followed by baking at temperature of 300 - 500°C for 5 - 30 s.
EFFECT: reduced pore density which facilitates device manufacture; improved parameters, enhanced reliability and yield.
1 cl, 1 tbl
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Authors
Dates
2005-07-20—Published
2004-02-11—Filed