FIELD: electricity.
SUBSTANCE: in a semiconductor structures annealing method upon forming a contact and metallisation system the Al/W - Ti/n+ - poly-Si structure is treated by an Ar laser with the emission wavelength of 0.51 mcm in the continuous emission mode with the scanning rate of 3-5 mm/s at the in-beam power of 5-13 W.
EFFECT: reducing leakage current values in semiconductor devices, providing processibility, improving parameters, quality and increasing percentage yield.
1 tbl
| Title | Year | Author | Number |
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| METHOD OF MAKING SEMICONDUCTOR STRUCTURES | 2020 |
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RU2738772C1 |
