NON-VOLATILE MEMORY DEVICE MANUFACTURING METHOD Russian patent published in 2023 - IPC H01L27/00 

FIELD: non-volatile memory production.

SUBSTANCE: invention relates to non-volatile memory production. A non-volatile memory production process includes the following steps: a multilayer structure is formed on a substrate and includes a gate dielectric layer, an auxiliary gate, an insulating layer and a sacrificial layer arranged one by one, a tunnel dielectric layer is formed on one side of the multilayer structure, a floating gate is formed on the tunnel dielectric layer, the multilayer structure is etched until the uppermost edge of the floating gate is above the top surface of the insulating layer, a dielectric material layer is formed to cover the floating gate side walls, the dielectric material layer is etched to form an etched layer of dielectric material and expose the uppermost edge of the floating shutter, a top gate structure is formed on the etched dielectric material layer, where a portion of the etched dielectric material layeris located between the top gate structure and the substrate.

EFFECT: invention provides a memory device capable of effectively erasing stored data.

20 cl, 16 dwg