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2 580 181

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(51)

IPC

H01L21/225(2006-01-01)

(21) (22)

Application

2015106504/28, 2015-02-25

(24)

Start date

2015-02-25

(22)

Actual filing date

2015-02-25

(45)

Published

2016-04-10

(72)

Inventor

Zubkhadzhiev Magomed-Ali VakhaevichKhasanov Aslambek IdrisovichMustafaev Gasan Abakarovich

(73)

Holder

Federalnoe Gosudarstvennoe Bjudzhetnoe Obrazovatelnoe Uchrezhdenie Vysshego Professionalnogo Obrazovanija Chechenskij Gosudarstvennyj Universitet Vpo Chechenskij Gosudarstvennyj Universitet)

METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/225

Abstract RU 2580181 C1

FIELD: instrument making.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of bipolar transistors with low leakage currents. In method of making semiconductor device base region is formed by boron diffusion from anodic oxide films in silicon at temperature 1473 K for 90 minutes in a stream of nitrogen 1.2·10^-2 l/s.

EFFECT: invention ensures reduction of leakage current values, high technological effectiveness, improved parameters of devices, higher reliability and percentage yield.

1 cl, 1 tbl

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RU 2 580 181 C1

Authors

Zubkhadzhiev Magomed-Ali Vakhaevich

Khasanov Aslambek Idrisovich

Mustafaev Gasan Abakarovich

Dates

2016-04-10—Published

2015-02-25—Filed