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2 556 765

(13)

(51)

IPC

H01L21/00(2006-01-01)

(21) (22)

Application

2014107070/28, 2014-02-25

(24)

Start date

2014-02-25

(22)

Actual filing date

2014-02-25

(45)

Published

2015-07-20

(72)

Inventor

Mustafaev Gasan AbakarovichMustafaev Abdulla GasanovichMustafaev Arslan Gasanovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Kabardino-Balkarskij Gosudarstvennyj Universitet Im. Kh.M. Berbekova

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE Russian patent published in 2015 - IPC H01L21/00

Abstract RU 2556765 C1

FIELD: electricity.

SUBSTANCE: manufacturing method of a semiconductor instrument involves application of an epitaxial layer, formation of areas of an emitter, a collector and a base that is shaped by alloying with carbon with concentration of 2.1-2.4·10¹⁹ cm^-3 with further annealing at the temperature of 500-550°C during 50-60 s.

EFFECT: providing a possibility of reducing density of defects; improving parameters, quality and increasing percentage of yield.

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RU 2 556 765 C1

Authors

Mustafaev Gasan Abakarovich

Mustafaev Abdulla Gasanovich

Mustafaev Arslan Gasanovich

Dates

2015-07-20—Published

2014-02-25—Filed