FIELD: electricity.
SUBSTANCE: in a powerful semiconductor structure, containing a row areas of the second type of conductivity in the form of trapezoids with parallel elevations surrounded from all sides by the area of the first type of conductivity, and such elevations form a strip separated into fragments limited by width with trapezoid bases, and along length - by sides of extreme trapezoids, at least a part of the row of the above areas of the second type of conductivity are arranged in the form of non-rectangular parallelograms, sides of which are parallel to adjacent sides of neighbouring areas of the second type of conductivity, from which at least one is not a parallelogram.
EFFECT: invention makes it possible to increase value of useful power per unit of semiconductor structure area.
1 dwg
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