FIELD: physics.
SUBSTANCE: high-power semiconductor structure has a row of regions of second conductivity-type surrounded on all sides by a region of first conductivity-type, wherein said second conductivity-type regions are in form of trapezia inscribed in a rectangle, having parallel heights and monotonously falling width of each from the large base to the smaller base, forming a band divided into fragments, bounded on the width by bases of the trapezia and on the length by lateral sides of the outermost trapezia. In at least part of the row, top and bottom bases of the trapezia at the edge of the band alternate.
EFFECT: longer distance between hottest areas and lower maximum temperature of the structure.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| POWERFUL SEMICONDUCTOR STRUCTURE | 2011 |
|
RU2464669C1 |
| HIGH-POWER RF AND MICROWAVE TRANSISTOR | 2009 |
|
RU2403650C1 |
| POWERFUL UHF TRANSISTOR STRUCTURE | 2003 |
|
RU2253923C1 |
| HIGH-POWER SEMICONDUCTOR STRUCTURE | 2003 |
|
RU2238604C1 |
| HIGH-POWER RADIO-FREQUENCY TRANSISTOR | 2009 |
|
RU2403651C1 |
| POWERFUL HIGH-FREQUENCY AND SUPER HIGH-FREQUENCY BALANCE TRANSISTOR | 2006 |
|
RU2328057C1 |
| HIGH-POWER MICROWAVE TRANSISTOR | 2003 |
|
RU2227945C1 |
| POWERFUL HIGH-FREQUENCY AND SUPER HIGH-FREQUENCY BROADBAND TRANSISTOR | 2009 |
|
RU2402836C1 |
| POWERFUL UHF TRANSISTOR | 2003 |
|
RU2253924C1 |
| POWERFUL HIGH-FREQUENCY AND MICROWAVE TRANSISTOR | 1990 |
|
SU1679922A1 |
