SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/265 

FIELD: semiconductor devices manufacturing technology.

SUBSTANCE: invention relates to production of silicon bipolar n—p—n-transistor with low leakage currents. Method of making a semiconductor device by ion implantation of boron into undoped polycrystalline silicon with energy (25–30) keV, dose 4*10¹⁴–3*10¹⁵cm^-2, with subsequent heat treatment in nitrogen atmosphere in two steps: first at temperature of 950 °C for 50 minutes, then at temperature of 1100 °C for 120 minutes, followed by annealing for 3 minutes in hydrogen atmosphere at temperature of 850 °C.

EFFECT: technical result of invention is reduction of leakage currents, provision of manufacturability, improvement of parameters of instruments, increase of yield percentage.

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