SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 2006 - IPC H01L21/329 

FIELD: semiconductor device manufacture.

SUBSTANCE: proposed semiconductor device manufacturing process involves use of silicon semiconductor wafer covered with epitaxial layer whereon base and emitter regions are formed. Low-doped base is formed by implanting boron with aid of ion-doping of base region at dose rate of 8 - 10 μC·cm^-2 and energy of 120 - 17 KeV followed by boron driving-in at temperature of 600 =- 1250 °C for 6 - 12 h.

EFFECT: facilitated manufacture, improved parameters, enhanced reliability and yield of low-doped base semiconductor devices.

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