METHOD OF SEMICONDUCTOR DEVICE MANUFACTURING Russian patent published in 2017 - IPC H01L21/331 

FIELD: electricity.

SUBSTANCE: in the method for manufacturing a semiconductor device after forming an emitter region on a silicon substrate by decomposing the monosilane at a temperature of 650°C a layer of polycrystalline silicon with a thickness of 0.2 μm is deposited at a rate of 10 nm/min, followed by heat treatment at a temperature of 1000-1100°C for 30 minutes in stream N₂O-N₂.

EFFECT: invention allows to increase the percentage of output of suitable devices, improving their quality and reliability.

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