FIELD: electricity.
SUBSTANCE: in the method for fabricating a semiconductor structure, the growth of an epitaxial silicon layer is carried out during the hydrogen reduction of SiCl4, at a rate of 0.7 mcm/min, at a temperature of 1200°C followed by doping Ge to a concentration of 1020-1021 cm-3.
EFFECT: reduced defectiveness, improvement of manufacturability, improvement of parameters, increase in reliability and percentage yield of serviceable devices.
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