METHOD FOR PREPARATION OF QUARTZ CRUCIBLES FOR GROWTH OF SILICON SINGLE CRYSTALS Russian patent published in 2009 - IPC C30B15/10 

Abstract RU 2355833 C1

FIELD: technological processes.

SUBSTANCE: invention is related to the field of semiconductor materials production. Method includes generation of coating by application of metal compounds onto internal and/or external surfaces of side walls and bottom part of previously heated quartz crucible, at that coat formation is done with application of solutions or suspensions of zirconium and/or hafnium solutions, which contain surface-active compounds based on ethylene oxide, then treatment is done first with microwave radiation action and then by heating up to temperature of 600-800°C and soaking at this temperature. Preferably treatment is done by microwave radiation in continuous or interrupted mode with frequency from 800 to 1500 MHz for 20-30 minutes.

EFFECT: increased service life of crucible.

9 cl, 7 ex

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RU 2 355 833 C1

Authors

Suponenko Aleksandr Nikolaevich

Sokolov Evgenij Borisovich

Dates

2009-05-20Published

2007-12-18Filed