METHOD FOR MANUFACTURING A RADIATION-RESISTANT SEMICONDUCTOR INSTRUMENT Russian patent published in 2022 - IPC H01L21/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of technology for manufacturing semiconductor instruments. Method is as follows: after creating a thin gate oxide according to the standard technology, a layer of silicon nitride Si₃N₄ with a thickness of 40 to 80 nm is formed on silicon wafers, on top thereof over the channel region, with a SiH₄-N₂ gas mixture flow rate in the reactor of 35 to 40 cm³/min, gas mixture pressure of 0.4 mmHg, HF power of 100 W, silane concentration in the mixture of 1 mol.%, substrate temperature of 400 °C, and silicon nitride Si₃N₄ deposition rate of 0.3 nm/s.

EFFECT: silicon nitride layer being applied over the oxide layer improves the operating characteristics of semiconductor instruments, because the built-in charge is decreased during irradiation in two-layer SiO₂-Si₃N₄ systems due to the positive charge in silicon dioxide being compensated with the negative charge accumulated in the silicon nitride, and radiation resistance increases.

1 cl, 1 tbl