DEVICE FOR THIN FILM COATING OF SEMI-CONDUCTORS AND DIELECTRICS Russian patent published in 2008 - IPC C23C16/30 C23C16/455 C23C16/458 B82B3/00 H01L21/02 

Abstract RU 2331717 C2

FIELD: electrics.

SUBSTANCE: invention relates to semi-conducting nanotechnology and thin film material science, namely to devices for thin film and dielectrics coating. Device consists of chamber with working capacity in cylindrical form where basis, support for film coating, reagents and cushion gas inlet system, heating elements and motor with shaft are located. Working surfaces of basis and support are made flat and even to form adjusting clearance between them due to changing of cushion gas pressure counteracting with load weight located on the support to adjust clearance between support and basis. Motor shaft is not rigidly fixed. Movable coupling is installed on the said shaft to transfer rotary motion to support with regard to fixed basis. Hollows are made on basis working surface. Hollows length does not exceed basis working surface diameter. There are openings in hollows to inlet reagents into clearance volume.

EFFECT: increase in thin film buildup speed in semi-conductors and dielectrics.

5 cl, 3 ex, 3 dwg

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RU 2 331 717 C2

Authors

Drozd Viktor Evgen'Evich

Dates

2008-08-20Published

2006-10-02Filed