METHOD FOR MANUFACTURING CHIPS OF POWER NITRIDE UHF-TRANSISTORS Russian patent published in 2008 - IPC H01L21/78 

FIELD: electricity, semiconductors.

SUBSTANCE: invention is attributed to manufacturing technology for semiconductor devices and can be used in manufacturing of power UHF-transistors using heterostructures on the base of the III group nitrides. Essence of invention: in the method for manufacturing the chips of power UHF-transistors containing epitaxial plate manufacturing, dielectric carrying plate manufacturing, overlapping of the epitaxial plate and the dielectric carrying plate, dividing the epitaxial plate and the dielectric carrying plate into separate elements and forming the chips, dividing the epitaxial plate and the dielectric carrying plate into separate elements is performed after overlapping of the epitaxial plate and the dielectric carrying plate.

EFFECT: prevention of redistribution of residual mechanical stresses in the epitaxial heterostructure/sapphire base-plate system forming epitaxial plate when he latter is divided into separate elements (chips) and providing of retention of electrophysical characteristics of epitaxial heterostructure.

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