METHOD OF MAKING X-RAY LITHOGRAPHIC PATTERN Russian patent published in 2019 - IPC H01L21/32 

FIELD: technological processes.

SUBSTANCE: invention relates to a method of making an X-ray lithographic pattern, i.e. mask for X-ray lithography, X-ray lithographic mask, X-ray template, for formation of resistive mask or latent image in X-ray sensitive materials by means of stencilled X-ray lithography. Method of making X-ray mask is characterized by that its multilayer support membrane is formed by sputtering on a silicon plate of several layers of different materials with low atomic weight, X-ray absorbing topological pattern is created by a known method of galvanic deposition through a resistive mask of metal with a large atomic number, and the support ring and X-ray transparent window in the substrate are formed in a single process by means of plasma-chemical etching of the silicon plate from the back side through the stencil. Etching is carried out to a stop layer, which can be an aluminum layer, or with leaving a thin layer of silicon and stopping the etching process at a certain time based on the readings of the sensor or based on calculations. As a mask for forming X-ray window or several windows in silicon substrate and X-ray template support ring, stencil out of material is used, etching rate of which is insignificant compared to silicon is less by 10 or more times.

EFFECT: method substantially simplifies the X-ray fabrication technology, reducing its prime cost, increases strength of the bearing membrane, and also enables formation of multilayer membrane carriers by combining layers of different materials of different thickness.

4 cl, 5 dwg