FIELD: physics.
SUBSTANCE: method consists in application of ohm contacts on back and front surfaces of multilayer semiconducting structure GalnP/Ga(ln)As/Ge grown on germanium substrate, structure division into chips, immunisation of chips side surface by dielectric, removal of some frontal contact layer of structure and application of anti-reflecting coat onto frontal part of structure. Structure division into chips is done via photoresist mask from the side of structure frontal surface at the depth of 15-50 mcm in two stages: at the first stage structure is etched down to germanium substrate by method of chemical etching, at the second stage germanium substrate is etched by method of electrochemical etching.
EFFECT: improved parameters of photoelectric transducers.
3 cl, 10 ex, 2 dwg
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