SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/20 

FIELD: electrical engineering.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of semiconductor structures with low density of defects. Technology of the method is as follows: on a sapphire substrate, a layer of aluminum nitride 30–50 nm thick is formed by reactive ion-plasma spraying using a target from aluminum in plasma of especially pure nitrogen without adding argon at pressure (3–5)10^-3 mm Hg and substrate temperature of 200–250 °C. Then, pyrolytically deposited layer of silicon at a film growth rate of 15 nm/s at temperature of 1,000–1,150 °C at consumption of hydrogen and silane accordingly 15 l/min and 50 ml/min.

EFFECT: invention provides reduced density of defects, improved manufacturability, improved parameters of structures, high quality and high percentage yield.

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