METHOD FOR APPLICATION OF PHOTORESISTIVE LAYER ON SUBSTRATE Russian patent published in 2009 - IPC H01L21/312 

FIELD: instrument making.

SUBSTANCE: invention is related to technology of semiconductor instruments and integrated circuits production, in particular to methods for application of photoresist onto siliceous substrate for performance of technological processes of photolithography. In method for application of photoresistive layer onto substrate, substrates are previously treated in RZ drier in furnace at temperatures of 75±5°C, 85±5°C, 105±5°C and time equal to 4±1 minutes, application of photoresisitve layer is carried out by centrifugation method in three stages: 1 - spread of photoresistive layer - 10±5 mcm; 2 - discharge of excessive photoresist with speed of table rotation V_I=950±50 rpm, V_II=2800±200 rpm; 3 - shaping profile of photoresist layer with thickness of δ_p/l= 1.3±0.1 mcm, at that difference in photoresist layer film thickness makes 2.5±0.5%.

EFFECT: production of even distribution of photoresist on substrate surface and application of photoresist without inclusions of various contaminants.

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