FIELD: metallurgy.
SUBSTANCE: several targets (8A, 8B, 8C, 8D) are located in vacuum so that to be electrically undependable from each other and sputtering is implemented by means of creation of magnetron discharge nearby targets (8A, 8B, 8C, 8D). During sputtering to adjacent targets (8A, 8B, 8C, 8D) there are alternately applied voltages, allowing phase difference 180 degrees, with specific temporal profile.
EFFECT: reduction of anomalous discharge on surface of target and blur-free areas, caused deposit of target material.
7 cl, 6 dwg, 2 ex
| Title | Year | Author | Number |
|---|---|---|---|
| APPARATUS OF MAGNETRON SPUTTERING | 2006 |
|
RU2385967C2 |
| MAGNETRON SPUTTERING DEVICE | 2019 |
|
RU2773044C1 |
| MAGNETRON SPUTTERING APPARATUS | 2021 |
|
RU2761900C1 |
| MAGNETRON METHOD OF SPRAYING | 1996 |
|
RU2114487C1 |
| DEVICE FOR HIGH-SPEED MAGNETRON SPUTTERING | 2006 |
|
RU2311492C1 |
| DEPOSITION BY IMPULSE MAGNETRON DISPERSION WITH PRE-IONISATION | 2005 |
|
RU2364661C2 |
| MAGNETRON WITH COOLING SYSTEM | 2023 |
|
RU2817411C1 |
| MAGNETRON SPUTTERING DEVICE | 2018 |
|
RU2747487C2 |
| MAGNETRON SPUTTERING DEVICE | 2022 |
|
RU2794524C1 |
| METHOD OF PRODUCING FILMS OF CADMIUM TELLURIDE BY MAGNETRON SPUTTERING AT A CONSTANT CURRENT | 2016 |
|
RU2657275C2 |
