REACTOR FOR DEPOSITION OF THEIR GAS PHASE (CVD-REACTOR) WITH TECHNOLOGICAL CHAMBER HEATED WITH HELP OF HIGH-FREQUENCY RADIATION (RF-RADIATION) Russian patent published in 2010 - IPC C30B25/10 C23C16/46 

FIELD: electricity.

SUBSTANCE: device for deposition of particularly crystalline layers onto at least one particularly crystalline substrate with technological chamber 5 arranged by several wall parts 1, 2, 3, 4, wall parts 1, 2, 3, 4 of which are electroconductive and join with each other to make contacts 2', 2", 3', 3", with reactor body 6 made of non-electroconductive material and including wall parts 1, 2, 3, 4 of technological chamber, and with heating coil 7 of high frequency that surrounds wall parts 1, 2, 3, 4 of technological chamber, comprises massive screening heating tube 8 arranged between reactor 6 body and walls 1, 2, 3, 4 of technological chamber as a whole part, material of which is electroconductive to such an extent that it heats from vortex currents induced by high-frequency field generated by means of high-frequency coil 7, significantly suppresses high-frequency field and surrounds technological chamber 5 so that wall parts 1, 2, 3, 4 of technological chamber are heated with the help of heat radiation.

EFFECT: invention makes it possible to prevent local heating in the area of contact zones of separate wall parts of technological chamber, which provides for an even temperature profile inside of it.

14 cl, 5 dwg