FIELD: semiconductor technology.
SUBSTANCE: present invention relates to semiconductor technology, particularly to devices and methods for producing epitaxial structures, including heteroepitaxial structures. Device and method for cooling epitaxial structures are disclosed. Device contains a base equipped with a cavity, holes and a place for placement of a gasket having a closed circuit. Holes in the base are made so that gas can be supplied from one side of the base to the other side. Outlets of holes on that side of base, on which there is a place for placement of gasket, are located inside closed circuit, formed by place for arrangement of gasket. Cavity has holes for gas supply and discharge and is stretched in two mutually perpendicular directions.
EFFECT: invention provides improved quality of obtained epitaxial structures.
10 cl, 1 dwg
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