FIELD: physics.
SUBSTANCE: two semiconductors (field-effect transistors FET1, FET2) are placed on the wall of a pipe such that their connection line lies perpendicular the direction of flow of the medium and perpendicular the direction of the magnetic field. Electrical resistance of the semiconductor is measured and then used to determine flow rate of the medium using a computer. Electrical resistance of the semiconductor changes only due to the effect of the electric field induced in the medium owing to its interaction with the magnetic field.
EFFECT: invention enables measurement of flow rate with complete electrical isolation of the electrical measurement circuit.
11 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF MEASURING FLOW RATE OF MEDIUM BY APPLYING MAGNETIC FIELD ONTO MEASURED VOLUME THROUGH WHICH SAID MEDIUM FLOWS | 2008 |
|
RU2460046C2 |
MEASUREMENT DEVICE AND METHOD TO MEASURE SPEED OF FLOW OF MEDIUM FLOWING VIA MEASUREMENT PIPE | 2011 |
|
RU2539839C2 |
ANGULAR AND LINEAR POSITION PICKUP | 1997 |
|
RU2117916C1 |
FIELD SENSORS | 2018 |
|
RU2740358C1 |
CELL OF NONVOLATILE ELECTRICALLY PROGRAMMABLE MEMORY | 2010 |
|
RU2436190C1 |
TERAHERTZ HOT ELECTRON BOLOMETER | 2021 |
|
RU2782707C1 |
APPLIANCE FOR AN AEROSOL GENERATION APPARATUS | 2019 |
|
RU2800769C2 |
APPLIANCE FOR AN AEROSOL GENERATION APPARATUS | 2019 |
|
RU2762626C1 |
PHYSICAL PARAMETER SENSOR HAVING ACOUSTIC WAVE DEVICE | 2009 |
|
RU2479849C2 |
SEMICONDUCTOR RADIATION DETECTOR WITH MODIFIED INTERNAL GATE STRUCTURE | 2005 |
|
RU2376678C2 |
Authors
Dates
2010-10-20—Published
2006-09-05—Filed