METHOD OF MEASURING MEDIUM FLOW RATE Russian patent published in 2010 - IPC G01F1/64 

Abstract RU 2401991 C2

FIELD: physics.

SUBSTANCE: two semiconductors (field-effect transistors FET1, FET2) are placed on the wall of a pipe such that their connection line lies perpendicular the direction of flow of the medium and perpendicular the direction of the magnetic field. Electrical resistance of the semiconductor is measured and then used to determine flow rate of the medium using a computer. Electrical resistance of the semiconductor changes only due to the effect of the electric field induced in the medium owing to its interaction with the magnetic field.

EFFECT: invention enables measurement of flow rate with complete electrical isolation of the electrical measurement circuit.

11 cl, 1 dwg

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RU 2 401 991 C2

Authors

Shtange Gerd

Dates

2010-10-20Published

2006-09-05Filed