METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2015 - IPC C30B23/00 C30B29/36 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of producing monocrystalline SiC - a wide-band gap semiconductor material, used to make integrated circuits. SiC is obtained via sublimation of a SiC source, placed in the lower part of a growth cell, onto a seed plate made of monocrystalline SiC in the presence of a plate, placed on the surface of the SiC source, made of material whose thermal conductivity is higher than that of the SiC source, wherein the plate is made of monocrystalline SiC with thickness of not less than 500 mcm with a diameter not less than that of a SiC monocrystalline seed, but not greater than 70% of the internal diameter of the growth cell. The plane of the plate facing the SiC monocrystalline seed can be flat-polished with surface roughness of less than 10 mcm.

EFFECT: invention increases the height and improves the quality of the grown ingot of monocrystalline SiC, increases the number of substrates made from the ingot and improves the reliability of integrated circuits made therefrom.

2 cl, 1 dwg, 1 tbl