FIELD: chemistry.
SUBSTANCE: multilayer magnetoresistive composite nanostructure consists of a layer of magnetically soft ferromagnetic material and several alternating layers of magnetic nanoclusters. The layer of magnetically soft ferromagnetic material has thickness of 3-5 nm and the layer is separated from the magnetic nanoclusters by a layer of non-magnetic dielectric with thickness of 1.5-3.0 nm, behind which lie alternating layers of magnetic nanoclusters made from ferromagnetic material with thickness of 0.8-2.0 nm and anti-ferromagnetic dielectric material with thickness of 1.5-3.0 nm.
EFFECT: design of a composite nanostructure with high tunnel magnetoresistance effect with possibility of operation at high working temperature and high reliability of the technology of making devices based on the disclosed nanostructure.
5 cl, 1 dwg
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Authors
Dates
2011-01-20—Published
2008-10-27—Filed