PROCEDURE FOR GROWTH OF LAYER OF GALLIUM NITRIDE AND PROCEDURE FOR PRODUCTION OF NITRIDE SEMI-CONDUCTING DEVICE Russian patent published in 2011 - IPC C30B25/02 C30B29/38 H01L33/00 

Abstract RU 2414549 C2

FIELD: machine building.

SUBSTANCE: procedure consists in injection of gas source of nitrogen and gas source of gallium into reactor for growth of layer of gallium nitride. Also, injection of gas- the source of nitrogen and gas - the source of gallium includes injection of gas containing atoms of indium at temperature from 850 to 1000°C so, that vacant centre of surface defining a cavity formed on a grown layer of gallium nitride is united with atoms of gallium or atoms of indium for filling the cavity. Internal pressure in the reactor is from 200 to 500 mbar.

EFFECT: improved surface morphology of gallium nitride layer due to reduced amount of cavities formed on it surface; device possesses improved working characteristics.

12 cl, 12 dwg

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RU 2 414 549 C2

Authors

Kim Changsung Sin

Jakovlev Evgenij Vladimirovich

Lundin Vsevolod Vladimirovich

Talalaev Roman Aleksandrovich

Dates

2011-03-20Published

2009-02-19Filed