METHOD FOR SYNTHESIS OF METASTABLE COMPOUNDS (In,Ga)N IN FILAMENTARY NANOCRYSTALS Russian patent published in 2020 - IPC C30B25/00 C30B25/16 C30B29/62 C30B29/40 C23C16/34 C23C16/455 B82B3/00 B82Y40/00 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to material science of semiconductors and can be used to produce segments of filament-like nanocrystals of In_xGa_1-xN. Method of forming filamentary nanocrystals In_xGa_1-xN, where x=0.2–0.8, stable in the region of metastable compositions, is carried out using metal chloride epitaxy from the gas phase at atmospheric pressure in the reactor using gas precursors GaCl and InCl₃, during which maintaining temperature in reactor 660 °C with allowable deviation ± up to 10 °C and monitoring the In content in the solid phase inside the filamentary nanocrystals by varying the ratio of precursor gas streams of group III GaCl and InCl₃ elements_, and maintaining flow ratio of NH₃ group precursor V to total flow of said group III precursors within 26.

EFFECT: high stability of the nanocrystalline structure while increasing indium content in the structure.

1 cl, 3 dwg, 1 tbl