SEMICONDUCTOR DEVICE Russian patent published in 2012 - IPC H01L23/48 

FIELD: electricity.

SUBSTANCE: semiconductor device contains semiconductor substrate, interconnection layer located at semiconductor substrate, interlayer insulating film and conducting layer, which are located at interconnection layer so that conducting layer forms honeycombed structure in regard to plane parallel to principal plane of semiconductor substrate and interlayer insulating film fill in hexagonal columns of honeycombed structure so that it is electrically connected to interconnection layer and the topmost interconnection layer is located at interlayer insulating film and conducting layer so that it is electrically connected to interconnection layer by means of conductive layer.

EFFECT: device has structure able to weaken mechanical stress applied to contact pad.

20 cl, 8 dwg