FIELD: physics.
SUBSTANCE: method comprises the steps, at which the first electrode layer is deposited on the substrate, the first dielectric film is deposited on the first electrode layer, a sacrificial layer is deposited on the first dielectric film, wherein the sacrificial layer is adapted to be removed forming the transducer cavity, the second dielectric film is deposited on the sacrificial layer and the second electrode layer is deposited on the second dielectric film, wherein the first dielectric film and / or the second dielectric film contain the first layer comprising oxide, the second layer comprising a material with high k, and the third layer comprising oxide, wherein the deposition steps are performed by atomic layer deposition.
EFFECT: providing the possibility of creating a capacitive transducer with improved performance characteristics.
15 cl, 5 dwg
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Authors
Dates
2017-05-11—Published
2013-01-18—Filed