CAPACITIVE TRANSDUCER OBTAINED BY MICROPROCESSING AND ITS MANUFACTURING METHOD Russian patent published in 2017 - IPC B06B1/02 

Abstract RU 2618731 C2

FIELD: physics.

SUBSTANCE: method comprises the steps, at which the first electrode layer is deposited on the substrate, the first dielectric film is deposited on the first electrode layer, a sacrificial layer is deposited on the first dielectric film, wherein the sacrificial layer is adapted to be removed forming the transducer cavity, the second dielectric film is deposited on the sacrificial layer and the second electrode layer is deposited on the second dielectric film, wherein the first dielectric film and / or the second dielectric film contain the first layer comprising oxide, the second layer comprising a material with high k, and the third layer comprising oxide, wherein the deposition steps are performed by atomic layer deposition.

EFFECT: providing the possibility of creating a capacitive transducer with improved performance characteristics.

15 cl, 5 dwg

Similar patents RU2618731C2

Title Year Author Number
CAPACITY TRANSDUCER OBTAINED BY MICROMACHINING AND METHOD OF ITS MANUFACTURE 2013
  • Dirksen Peter
  • Maukzok Ryudiger
  • Karakaya Koraj
  • Klotvijk Jokhan Khendrik
  • Marselis Bout
  • Myulder Marsel
RU2627062C2
HIGH-SELECTIVE CONVERTERS WITH COATED ELECTRODES AND NANOGAP FOR DETECTING REDOX MOLECULES 2014
  • Tajebi Noureddine
  • Su Sin
  • Li Khandun
RU2643218C2
METHOD OF MAKING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 2021
  • Yan, Menmen
  • Baj, Tsze
RU2814457C1
TRANSPARENT SUPPORTED ELECTRODE FOR OLED 2015
  • Lee Youngseong
  • Han Jinwoo
RU2685086C2
FIELD EMISSION MICROTRIODE AND METHOD OF MANUFACTURE 2006
  • Tatarenko Nikolaj Ivanovich
RU2360321C2
METHOD FOR MANUFACTURE OF GAS AND LIQUID FLOW VELOCITY SENSOR 2007
  • Seleznev Vladimir Aleksandrovich
  • Prints Viktor Jakovlevich
RU2353998C1
METHOD FOR MULTILAYER GATE STRUCTURE AND STRUCTURE DESIGN 2009
  • Ramachandran Ravikumar
  • Jan' Khunvehn'
  • Moumen Naim
  • Shehffer Dzhejms Kenion
  • Krishnan Siddart A.
  • Von Kejt Kvon Khon
  • Kvon Unokh
  • Beljanski Majkl P.
  • Uajz Richard
RU2498446C2
METHOD TO MANUFACTURE MULTI-LEVEL INTERCONNECTIONS OF INTEGRAL MICROCIRCUIT CHIPS WITH AIR GAPS 2010
  • Valeev Adil' Salikhovich
  • Shishko Vladimir Aleksandrovich
  • Ranchin Sergej Olegovich
RU2436188C1
FOCAL MATRIX RECEIVER AND ITS FABRICATION 2011
  • Lapadatu Adriana
  • Kittil'Slann Ermunn
RU2568946C2
SEMICONDUCTOR MEMORY DEVICE WITH CAPACITORS FORMED ABOVE AND BELOW MEMORY LOCATION TRANSISTOR (ALTERNATIVES) AND ITS MANUFACTURING PROCESS 1995
  • Li Dzhoo Jang
RU2194338C2

RU 2 618 731 C2

Authors

Dirksen Peter

Maukzok Ryudiger

Karakaya Koraj

Klotvijk Jokhan Khendrik

Marselis Bout

Myulder Marsel

Dates

2017-05-11Published

2013-01-18Filed