FIELD: microelectronics.
SUBSTANCE: invention relates to the field of nano- and microelectronics, and in particular to the creation of conductive interconnects of the metallization of high-temperature silicon semiconductor devices and ICs. A method for producing thin metal films based on tungsten includes magnetron sputtering in a gaseous medium containing argon of a tungsten-based target for depositing a thin film of a two-component tungsten alloy, while a target based on a tungsten alloy containing 5-10 at.% of titanium is used as a target, and deposited on the oxidized surface of the silicon substrate thin film of the alloy containing 5-10 at.% titanium, tungsten - the rest. If a tungsten target is used as a target, magnetron sputtering is carried out in an argon-nitrogen environment and a thin film of tungsten alloy containing 10-15 at.% of nitrogen is deposited on the oxidized surface of the silicon substrate, tungsten is the rest.
EFFECT: resulting films of two-component W(Ti) and W(N) alloys are characterized by a reduced level of built-in mechanical stresses, increased ductility, and satisfactory adhesion to silicon oxide with a slight increase in volume resistivity.
1 cl, 1dwg, 1 ex
