SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2019 - IPC H01L21/283 

FIELD: instrument making.

SUBSTANCE: invention relates to the field of semiconductor device manufacturing technology, in particular to the devices with reduced contact resistance manufacturing technology. Invention aim is reduction in the contact resistance, enabling manufacturability, increase in the devices operation parameters increase in the quality and increase in the usable yield percentage. Essence: silicide contacts to the elements are formed on the basis of palladium silicide Pd₂Si by the 50 nm thick palladium film application by the electron-beam sputtering in vacuum of 2.7⋅10^-5 Pa, with the deposition rate of 0.5 nm/s, at the substrate temperature of 100 °C followed by the heat treatment at 250 °C for 30 min in the inert environment.

EFFECT: reduction of contact resistance, ensuring manufacturability, improving the structures parameters, increase in the quality and increase in the usable yield percentage.

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