METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2018 - IPC H01L21/316 

FIELD: electrical engineering.

SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of field-effect transistors with reduced gate resistance. In the method of manufacturing a semiconductor device after forming a gate dielectric, a SnO₂ oxide layer is deposited on top of this layer by decomposition of SnCl₄ in the presence of oxygen, with the use of carrier gas-helium, with an oxygen consumption of 0.2 l/min, helium – 0.8 l/min, at a substrate temperature of 400–450 °C and tin oxide deposition rate of 20 nm/min, 70 nm thick, followed by annealing at a temperature of 300 °C for 25 minutes. Next, n-channel field effect transistors and drain, source and gate electrodes are formed using standard technology.

EFFECT: reduced gate resistance, provided processability, improved instrument parameters, quality and increased yield percentage.

1 cl