METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Russian patent published in 2021 - IPC H01L21/283 H01L21/335 B82Y40/00 

FIELD: semiconductors.

SUBSTANCE: invention relates to the field of technology of production of semiconductor devices. The method technology consists in following: an oxide layer film is formed on silicon substrate of 10 ohms*cm (100) of p-type conductivity after treatment with halogen lamp radiation in H₂ at a temperature of 1000°C for 10 s. The oxidation is carried out in a medium of dry oxygen O₂ at a temperature of 1100-1150°C for 20 s with heating and cooling rates of 50°C/min to a thickness of 20 nm with the growth of the oxide layer film of 1 nm/s.

EFFECT: invention makes it possible to reduce leakage currents, ensure manufacturability, improve the device parameters, improve quality and increase the percentage of usable output.

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