FIELD: electricity.
SUBSTANCE: thin-film transistor comprises the first capacitor, comprising an area, in which the first electrode of the capacitor connected with an electrode of source, and the second electrode of the capacitor are arranged one on the other in direction of thickness at opposite sides of the first layer of a dielectric, formed between them, the second capacitor, comprising an area, in which the third and fourth electrodes of the capacitor are arranged one above the other in direction of thickness at the opposite sides of the second layer of the dielectric, formed between them, four output buses, stretching from the appropriate electrode of the capacitor in a plane direction, the first connection crossing the second and fourth output buses, when looking in direction of thickness, and the second connection crossing the first and third output buses, when looking in direction of thickness, besides, the second electrode of the capacitor and the gate electrode are connected to each other via the second output bus, the third electrode of the capacitor and the source electrode are not connected to each other, the fourth electrode of the capacitor and the gate electrode are not connected to each other.
EFFECT: invention makes it possible to create a thin-film transistor, occurrence of a defect in which may be prevented even in case of leakage in a capacitor connected to a transistor body.
37 cl, 13 dwg
