METHOD OF MANUFACTURE OF SEMICONDUCTOR STRUCTURES Russian patent published in 2018 - IPC H01L21/225 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor manufacturing technology, in particular to technology of manufacturing semiconductor structures with low leakage currents. In manufacturing method of semiconductor structure, shallow transitions are formed by action of pulsed laser at power density of 0.5–1.5 J/cm², with pulse duration of 30 ns per pre-applied impurity material film by HF plasma treatment in atmosphere B₂H₆ at substrate temperature of 280–300 °C, pressure of He-B₂H₆ gas mixture 27 Pa and RF power level of 5 W, which allows reproducibly to form shallow transitions with smaller crystal disturbances and better electrical parameters.

EFFECT: decrease in leakage currents, improvement of parameters, increase in reliability and percentage of yields.

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