METHOD FOR MANUFACTURING A RADIATION-RESISTANT SEMICONDUCTOR DEVICE Russian patent published in 2023 - IPC H01L21/265 

FIELD: semiconductor devices production technology.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing a bipolar transistor with a high gain and increased radiation resistance. A method for manufacturing a radiation-resistant bipolar transistor includes the formation of a base region, the introduction of ions and annealing, while the base region of the bipolar transistor is formed by the introduction of boron ions at a beam current of 200 mcA/cm² and an ion energy of 20-80 keV and a dose of 2⋅10¹⁶ cm^-2, after which is carried out by laser annealing in a vacuum of 1.3⋅10^-5 Pa with a pulse duration of 20 ns and an energy density of 0.5 J/cm².

EFFECT: invention provides the possibility of increasing the value of the gain, which is a characteristic parameter characterizing the radiation resistance of the device.

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