METHOD OF SMOOTHING ALUMINIUM FILM SURFACE ON SILICON SUBSTRATE Russian patent published in 2013 - IPC B23K35/00 B82B3/00 

Abstract RU 2477204 C1

FIELD: process engineering.

SUBSTANCE: invention relates to microelectronics. Proposed method comprises photon annealing for 3-4 s. Then, film surface is wetted in tin-based liquid-phase system.

EFFECT: higher surface quality.

6 dwg, 3 ex

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RU 2 477 204 C1

Authors

Sozaev Viktor Adygeevich

Ponezhev Murat Khazhismelovich

Kashezhev Aslan Zarifovich

Manukjants Artur Rubenovich

Elekoeva Kristina Muratovna

Dates

2013-03-10Published

2011-07-29Filed