METHOD AND DEVICE FOR DEPOSITION OF ATOMIC LAYERS Russian patent published in 2016 - IPC C23C16/455 C23C16/54 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of chemical deposition of atomic layers on a substrate, a device and a line for the said deposition. Method of chemical deposition of atomic layers on a substrate involves the use of a reactor for deposition of atomic layers able to deposit a material on at least one substrate by sequential surface reactions of self-saturation, the use of dry air in the reactor as a purging gas and the use of dry air as a bearing inert gas to increase pressure in the source of precursor. Device for the said deposition includes a reaction chamber for deposition of atomic layers able to deposit a material on at least one substrate by sequential surface reactions of self-saturation, a dry air supply line from a dry air source to feed dry air as a purging gas into the reaction chamber of the said device and means to use the dry air as a bearing inert gas to increase pressure in the source of precursor. Production line for chemical deposition of atomic layers on a substrate, which contains as an agent for chemical deposition of atomic layers on the substrate the said device.

EFFECT: provided is simple and efficient design of the device for the said deposition using dry air as a purging and a bearing inert gases to increase pressure during deposition.

15 cl, 10 dwg