METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC H01L21/31 

FIELD: physics.

SUBSTANCE: invention can be used in making semiconductor devices. In the method of making a semiconductor diode, a passivating coating is formed by successively depositing five layers which include a thermal silicon dioxide layer with thickness of 0.54 mcm and several layers deposited by chemical vapour deposition, specifically: silicon dioxide, phosphoric-silicate glass, silicon dioxide again and semi-insulating amorphous silicon α=Si:O with thickness of 0.5 mcm, wherein the layer of semi-insulating amorphous silicon is deposited at atmospheric pressure and temperature of 650°C, the carrier used is nitrogen and the ratio of the gaseous mixture of H₂O and SiH₄ is N₂O/SiH₄=0.2.

EFFECT: high breakdown voltage of devices, technological effectiveness, improved parameters of devices, high quality and percentage output of non-defective devices.