METHOD OF MAKING A SEMICONDUCTOR DEVICE Russian patent published in 2017 - IPC H01L21/316 

FIELD: electricity.

SUBSTANCE: invention relates to a technology for production of semiconductor devices, in particular, to production of the gate oxide of a field-effect transistor. Method of making a semiconductor device involves forming a gate oxide from aluminium isoproxide at the temperature of 400 °C, the pressure of 100 Pa and the gas mixture consumption of 250 ml/min, with the rate of growth of the Al₂O₃ layer of 20 nm/min.

EFFECT: invention increases percentage yield of serviceable devices and improves their reliability.

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