METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2018 - IPC H01L21/322 

FIELD: instrument engineering.

SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures with lower density of defects. In the method for fabricating the semiconductor structure, the silicon substrate on the rear side is subjected to treatment with Sb ions⁺ with an energy of 30 keV, a dose of 3.5*10¹⁵ cm^-2 at a temperature of 300°C, followed by heat treatment at a temperature of 800°C for 4-6 hours. Then, build up a silicon film on a silicon substrate and form semiconductor devices using standard technology.

EFFECT: processing of the back side of the substrate with antimony ions provides gettering of defects, which improves the quality of structures and the percentage of yields that are suitable.

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