SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2024 - IPC H01L27/01 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to production of a gate oxide of a field-effect transistor with low leakage currents and reduced effect of hot electrons. Technology of the method consists in the following: on silicon plates of n-type conductivity with specific resistance of 4.5 Ohm*cm a layer of a thermal layer of oxide SiO₂ of 10 nm was grown at a growth rate of 0.2 nm/min, oxidation in dry oxygen at temperature of 850 °C and atmospheric pressure for 50 minutes. Nitriding of 10 nm of thermal oxide layer of SiO₂ was carried out at temperature of 850 °C in ammonia NH₃ medium, at pressure of 1*10⁴ Pa for 60 minutes, and the subsequent reoxidation of the nitrated oxide was carried out in dry O₂ at atmospheric pressure for 180 min at temperature of 850 °C. Areas of the field-effect transistor and contacts to these areas were formed according to the standard technology. Choice of reoxidation conditions is due to the need to remove electron traps and suppress the formation of states at the interface.

EFFECT: reduction of leakage currents and effect of hot electrons, provision of manufacturability, improvement of parameters of devices, improvement of quality and increase of percentage yield.

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