SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L21/336 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of gate oxide of field-effect transistor with low leakage currents. Essence: on n-type silicon conductivity plates with specific resistance of 4.5 Ohm⋅cm, layer of thermal layer of 22 nm oxide was grown by oxidation in dry oxygen at 1,000 °C. Further, process of nitriding gate valve in atmosphere of ammonia NH₃ for 15 minutes at 1,100 °C and its oxidation in an atmosphere of dry oxygen O₂ for 30 minutes at 1,100 °C, then thermal treatment is carried out at temperature 600 °C for 35 s in argon medium. Field transistor regions and contacts to these regions are formed using standard technology.

EFFECT: technical result consists in reduction of leakage currents, provision of manufacturability, improvement of parameters of instruments, improvement of quality and increase of yield percentage.

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