SEMICONDUCTOR DEVICE MANUFACTURING METHOD Russian patent published in 2025 - IPC H01L21/24 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of gate oxide field-effect transistor with low leakage currents and reducing the effect of injection of hot carriers. Technology of the method consists in the following: active regions of a n-channel field-effect transistor are created on p-type silicon plates according to a standard technology; a layer of thermal oxide SiO₂ with thickness of 10 nm is grown by oxidation in dry oxygen O₂ at temperature of 850 °C and atmospheric pressure for 50 minutes. Then, 10-nanometer thermal oxide layer of SiO₂ is nitrided in ammonia NH₃ medium for 60 minutes at temperature of 850 °C and pressure of 0.1 atm and subsequent reoxidation of nitrided oxide in dry O₂ at atmospheric pressure, temperature of 850 °C for 180 minutes. Areas of the field-effect transistor and contacts to these areas were formed according to the standard technology.

EFFECT: reoxidation provides removal of electronic traps and suppression of formation of states at the interface Si/SiO₂ and, accordingly, reduction of leakage currents and influence of injection of hot carriers.

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