METHOD FOR FORMING FIELD-EFFECT TRANSISTORS Russian patent published in 2023 - IPC H01L21/283 H01L21/3205 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to the field of technology for the production of semiconductor devices, in particular to the technology of manufacturing field-effect transistors with molybdenum silicide with a reduced value of contact resistance. The method for manufacturing field-effect transistors includes the processes of forming active regions of a field-effect transistor and electrodes for them, a gate dielectric and silicide, while molybdenum silicide - MoSi₂ is formed on silicon substrates of p-type conductivity with (100) orientation, with a specific resistance of 10 Ohm⋅cm by deposition films of molybdenum Mo on a silicon wafer at a pressure of 6.5⋅10^-9 Pa, a substrate temperature of 700°C, with a growth rate of 0.1 nm/s and subsequent annealing in a forming gas at a temperature of 900°C for 60 min.

EFFECT: invention provides the possibility of reducing the contact resistance, improving the parameters of the devices, improving the quality and manufacturability and increasing the yield percentage.

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