METHOD OF MAKING A THIN-FILM TRANSISTOR Russian patent published in 2024 - IPC H01L29/78 

FIELD: manufacturing technology.

SUBSTANCE: use for production of amorphous silicon with low density of defects. Essence of the invention consists in the fact that the thin-film transistor manufacturing method includes the processes of forming active regions, an amorphous silicon layer and annealing, wherein amorphous silicon layer is formed on silicon substrate Si after treatment of back side of substrate with argon ions Ar with energy of 90 keV, dose of 10¹³ cm⁻², thickness of 240 nm, by deposition in hydrogen-argon plasma at H/Ar concentration ratio of 32 %, temperature of 300 °C, pressure of 0.27 Pa, deposition rate of 0.17 nm/s.

EFFECT: providing the possibility of reducing defectiveness, providing manufacturability, improving parameters of devices, improving quality and increasing the percentage of yield of good devices.

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