METHOD FOR MANUFACTURING OF THIN-FILM TRANSISTOR Russian patent published in 2019 - IPC H01L21/265 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly to production of thin-film transistors with low leakage current. Technology of the method is as follows: hydrogenated amorphous silicon is formed by treating crystalline silicon with a stream of silicon ions with dose of 1*10¹⁶ cm^-2 with energy of 250 keV at temperature of 40 °C. Hydrogen was introduced by implantation after amorphisation with energy of 20 keV and dose of 5*10¹⁵ cm^-2.

EFFECT: proposed method for manufacturing of thin-film transistor allows increasing output percentage of non-defective devices and improving their reliability; method also provides reduction of leakage currents, improved parameters of structures, improved manufacturability and quality.

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