HIGH-VOLTAGE GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR Russian patent published in 2014 - IPC H01L29/772 B82B1/00 

FIELD: electricity.

SUBSTANCE: invention is related to high-voltage gallium nitride high-electron mobility transistors (GaN HEMT), in particular to GaN HEMT design for high-voltage applications. A high-voltage gallium nitride high-electron mobility transistor is grown at a silicon substrate with coated template structure having thickness of 700-800 nm and consisting of alternate layers of GaN/AlN with thickness of 10 nm at most; between the buffer layer and barrier layers a spacer layer of AlN is introduced with thickness of 1 nm at most; passivation layer is covered by a field plate connected electrically to the gate; distance between the gate and drain and length of the field plate are interrelated quantities, which are selected on the basis of required breakdown voltage.

EFFECT: manufacture of high-voltage gallium nitride high-electron mobility transistor with high performance capabilities at simplification of the process cycle and reduction of material costs for its manufacture.

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